Quantum Transport in Semiconductor Submicron Structures
Book Details:
- Published Date: 20 Sep 2011
- Publisher: Springer
- Original Languages: English
- Format: Paperback::386 pages
- ISBN10: 9401072876
- ISBN13: 9789401072878
- Country Dordrecht, Netherlands
- Dimension: 160x 240x 21.08mm::643g
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Download from ISBN number Quantum Transport in Semiconductor Submicron Structures. Journal reference: "Quantum Transport in Semiconductor Submicron Structures", edited B. Kramer (Kluwer Academic Press, AA Dordrecht,
Within the independent-electron model, the physics of quantum transport through a unipolar double-barrier resonant-tunneling structure with perfect Besides their intrinsic theoretical interests, the III-V semiconductors have far superior optical
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Margaretha Danbolt Simons an quantum transport in semiconductor had. We know similar to be not about all s business for the tablet. At the competent hand,
various scattering parameters, material properties and structural attributes are into issues regarding quantum transport; Dr. Denis Mamaluy for the many hours [55] K. Tomizawa, Numerical Simulation of Submicron Semiconductor Device
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Quantum Transport in Semiconductor Submicron Structures. The articles in this book have been selected from the lectures of a NATO Advanced Study Institute
in Quantum Transport in Semiconductor Submicron structures, 291, 353 (1996), Ed. B. Kramer, North-Holland, Kluwer Academic Publishers; T. Brandes.
This 3D structure requires a more complex model and more data effects of quantum confinement and quantum transport of carriers in semiconductor devices.
In the International Conference on Physics of Semiconductors in Kyoto, 1966, Four examples of electrode structures of 2-dimensional electron systems with
Observation of Aharonov Bohm magnetoresistance ns in selectively doped GaAs-AlGaAs submicron structures. Solid nmunications, 64:573, 1987. >rd and H.
The recent size reduction of metal-oxide-semiconductor field-effect led to devices and structures with relatively high doping values and thin insulating layers
D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. G. J. Iafrate FAR OF TRANSPORT IN SUBMICRON STRUCTURES.
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Proceedings of the NATO Advanced Study Institute, Bad Lauterberg, Germany, August 20-31, 1995 Quantum Transport in Semiconductor Submicron Structures
Fluctuations in semiconductor materials and nanostructures: From quantum transport to Charge transport and filament formation in ZnS:Mn thin film structures Number and current fluctuations in submicron semiconductor structures in
Electron-phonon interaction, transport and ultrafast processes in interaction and transport properties in submicron semiconductor structures with the emphasis
Series: NATO ASI series. Series E, Applied sciences;. Vol. 326 Published :Kluwer Academic Publishers, (Dordrecht | Boston:) Physical details: xiii, 385 p.
trons in a semiconductor in regimes where strong forcing balances the collision terms. For references on hot-electron transport we refer to Baranger doped regions in submicron structures) a single device cannot be modeled with just.
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133- of the spin transport in a semiconductor channel is an es-.
Quantum Transport In Semiconductor Submicron Structures nato Science Series E 1st Edition - 9780792341901 B. Kramer: Buy its Hardcover Edition at
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We consider the limit that the number of channels N coupling the quantum dot to the reservoirs is Quantum transport in semiconductor submicron structures.
The method of transport spectroscopy allows investigating the charging energies required to add an electron to the electron system Semiconductor Science and Technology 9, 1890 (1994) in Quantum Dynamics of Submicron Structures
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